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EIC7785-4
UPDATED 08/21/2007
7.70-8.50GHz 4-Watt Internally-Matched Power FET
FEATURES
* * * * * * * 7.70-8.50GHz Bandwidth Input/Output Impedance Matched to 50 Ohms +36.5 dBm Output Power at 1dB Compression 8.5 dB Power Gain at 1dB Compression 34% Power Added Efficiency -46 dBc IM3 at PO = 25.5 dBm SCL 100% Tested for DC, RF, and RTH
ELECTRICAL CHARACTERISTICS (Ta = 25C)
SYMBOL P1dB G1dB G PAE Id1dB IM3 IDSS VP RTH PARAMETERS/TEST CONDITIONS1 Output Power at 1dB Compression f = 7.70-8.50GHz VDS = 10 V, IDSQ 1100mA Gain at 1dB Compression f = 7.70-8.50GHz VDS = 10 V, IDSQ 1100mA Gain Flatness f = 7.70-8.50GHz VDS = 10 V, IDSQ 1100mA Power Added Efficiency at 1dB Compression VDS = 10 V, IDSQ 1100mA f = 7.70-8.50GHz Drain Current at 1dB Compression f = 7.70-8.50GHz Output 3rd Order Intermodulation Distortion f = 10 MHz 2-Tone Test; Pout = 25.5 dBm S.C.L2 VDS = 10 V, IDSQ 65% IDSS f = 8.50GHz Saturated Drain Current VDS = 3 V, VGS = 0 V Pinch-off Voltage Thermal Resistance
3
Caution! ESD sensitive device. MIN 35.5 7.5 TYP 36.5 8.5 0.6 34 1100 -43 -46 2000 -2.5 5.5 2500 -4.0 6.0
o
MAX
UNITS dBm dB dB %
1300
mA dBc mA V C/W
VDS = 3 V, IDS = 20 mA
Note: 1. Tested with 100 Ohm gate resistor. 2. S.C.L. = Single Carrier Level. 3. Overall Rth depends on case mounting.
ABSOLUTE MAXIMUM RATING FOR EFE
SYMBOLS PARAMETERS ABSOLUTE1 15V -5V 48mA -9.6mA 36dBm 175C -65C to +175C 25W CONTINUOUS2 10V -4V 14.4mA -2.4mA @ 3dB Compression 175C -65C to +175C 25W
Vds Vgs Igf Igr Pin Tch Tstg Pt
Drain-Source Voltage Gate-Source Voltage Forward Gate Current Reverse Gate Current Input Power Channel Temperature Storage Temperature Total Power Dissipation
Note: 1. Exceeding any of the above ratings may result in permanent damage. 2. Exceeding any of the above ratings may reduce MTTF below design goals. Specifications are subject to change without notice. Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085 Phone: 408-737-1711 Fax: 408-737-1868 Web: www.excelics.com
page 1 of 4 Revised October 2007
EIC7785-4
UPDATED 08/21/2007
7.70-8.50GHz 4-Watt Internally-Matched Power FET
PERFORMANCE DATA
Typical S-Parameters (T= 25C, 50 system, de-embedded to edge of package) VDS = 10 V, IDSQ 1100mA
S11 and S22
6 0.
Swp Max 8.7GHz
2. 0
1.0
20
S21 and S12
0. 8
5. 0 0. 2
S21 and S12 (dB)
10.0
0.2
0.4
0.6
0.8
1.0
2.0
3.0
4.0
5.0
0
.4 -0
-0 .8
S[2,2] EIC7785-4
-1.0
.0 -2
-0 .6
FREQ (GHz)
--- S11 --MAG ANG
7.5 7.6 7.7 7.8 7.9 8 8.1 8.2 8.3 8.4 8.5 8.6 8.7
0.6034 0.5516 0.4935 0.4264 0.3594 0.29 0.2323 0.1942 0.1858 0.2013 0.2311 0.2635 0.2953
-149.14 -159.75 -172.49 173.09 156.04 135.54 109.56 77.04 42.24 9.94 -14.73 -35.41 -51.98
Specifications are subject to change without notice. Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085 Phone: 408-737-1711 Fax: 408-737-1868 Web: www.excelics.com
-3 .0
S[1,1] EIC7785-4
2.6409 2.7534 2.8842 2.9901 3.0911 3.152 3.1785 3.1614 3.0973 3.0181 2.9014 2.7724 2.6626
-4 .0 -5 . 0
2 -0 .
Swp Min 7.5GHz
MAG
-1 0. 0
0. 4
0 3.
10
0 4.
0
DB(|S[2,1]|) EIC7785-4 DB(|S[1,2]|) EIC7785-4
10 .0
-10
-20
-30 7.5 7.8 8.1 Frequency (GHz) 8.4 8.7
--- S21 --ANG
--- S12 --MAG ANG
--- S22 --MAG ANG
-81.54 -93.4 -105.71 -118.6 -132.17 -146.09 -159.96 -174.31 171.66 157.94 144.33 131.4 119.31
0.0862 0.0948 0.1006 0.1076 0.1154 0.1203 0.1233 0.1262 0.1277 0.1256 0.1242 0.1232 0.1178
-138.31 -149.69 -161.26 -174.38 172.85 159.84 146.34 132.54 118.21 105.29 92.6 79.73 66.75
0.5314 0.5287 0.5183 0.5005 0.4752 0.4444 0.4117 0.3812 0.3633 0.3511 0.3517 0.3594 0.3726
32.49 20.36 7.57 -6.22 -21.19 -37.73 -56.07 -75.72 -96.19 -117.08 -137.38 -155.44 -171.45
page 2 of 4 Revised October 2007
EIC7785-4
UPDATED 08/21/2007
7.70-8.50GHz 4-Watt Internally-Matched Power FET
Power De-rating Curve and IM3 Definition
Power Dissipation vs. Temperature
30
THIRD-ORDER INTERCEPT POINT IP3
25 Total Power Dissipation (W) Potentially Unsafe Operating Region
IP3 = Pout + IM3/2 f1 or f2
20
Pout [S.C.L.] (dBm)
Pout Pin IM3
15 Safe Operating Region
10
IM3
f1 f2
(2f1-f2) f1 f2 (2f2-f1)
5
(2f2 - f1) or (2f1 - f2)
0 0 25 50 75 100 125 Case Temperature (C) 150 175
Pin [S.C.L.] (dBm)
Typical Power Data (VDS = 10 V, IDSQ = 1100 mA)
38 37
Typical IM3 Data (VDS = 10 V, IDSQ 65% IDSS)
12 11
P-1dB & G-1dB vs Frequency
IM3 vs Output Power
-10 -15 -20 -25 -30 -35 -40 -45 -50 -55 -60 20 21 22 23
f1 = 8.50 GHz, f2 = 8.51 GHz
P-1dB (dBm)
G-1dB (dB)
36 35 34 P-1dB (dBm) 33 7.6 7.8 8.0 8.2 8.4 8.6 G-1dB (dB)
10 9 8 7
IM3 (dBc)
IM3 (dBc) 24 25 26 27 28 29 30 31 32 33
Frequency (GHz)
Pout [S.C.L.] (dBm)
Specifications are subject to change without notice. Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085 Phone: 408-737-1711 Fax: 408-737-1868 Web: www.excelics.com
page 3 of 4 Revised October 2007
EIC7785-4
UPDATED 08/21/2007
7.70-8.50GHz 4-Watt Internally-Matched Power FET
PACKAGES OUTLINE
Dimensions in inches, Tolerance + .005 unless otherwise specified
EIC7785-4 (Hermetic) EIC7785-4NH (Non-Hermetic)
Excelics
EIC7785-4 .827.010 .669
.120 MIN
.024 .421
Excelics
EIC7785-4NH
YYWW
SN
.120 MIN
YYWW
SN
.125 .508.008 .442 .168.010
ALL DIMENSIONS IN INCHES
.004 .063 .004 .105.008
ALL DIMENSIONS IN INCHES
Caution! ESD sensitive device.
Caution! ESD sensitive device.
ORDERING INFORMATION
Part Number EIC7785-4 EIC7785-4NH
Notes:
Packages Hermetic Non-Hermetic
Grade1 Industrial Industrial
fTest (GHz) 7.70-8.50GHz 7.70-8.50GHz
P1dB (min) 35.5 35.5
IM3 (min)2 -43 -43
1. Contact factory for military and hi-rel grades. 2. Exact test conditions are specified in "Electrical Characteristics" table.
DISCLAIMER EXCELICS SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. EXCELICS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN.
LIFE SUPPORT POLICY EXCELICS SEMICONDUCTOR PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF EXCELICS SEMICONDUCTOR, INC. AS HERE IN:
1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user. 2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness
Specifications are subject to change without notice. Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085 Phone: 408-737-1711 Fax: 408-737-1868 Web: www.excelics.com
page 4 of 4 Revised October 2007

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